CAB006A12GM4 is a silicon carbide MOSFET-based half-bridge module designed for high-efficiency power conversion in applications such as renewable energy systems, DC fast chargers, and energy storage. It features press-fit pins for easy assembly and an aluminum nitride substrate with an optional pre-applied thermal interface material. The module operates at a drain-source voltage of 1200 V and has a typical on-state resistance of 6 mΩ at 25 °C. It is rated for a continuous drain current of 200 A and a maximum junction temperature of 175 °C. Power dissipation is 680 W at a heatsink temperature of 75 °C. The package measures 56.7 mm × 62.8 mm with a weight of 39 g and is certified to UL 1557 for electrically isolated semiconductor devices. Mounting requires 2.0 to 2.3 N·m torque with M4 bolts, and case isolation supports 3 kV AC for one minute.
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
SIC, MODULE, 6M, 1200V, 48 MM, A
| Richardson RFPD | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | CAB006A12GM4 | 1697-CAB006A12GM4-ND |
| Product Name | Silicon Carbide MOSFET Modules | FET, MOSFET Arrays |
| Package Type | GM4 | Module |
