The C4MV045065T is a 650V N-channel enhancement mode silicon carbide power MOSFET designed for high-efficiency switching applications such as EV chargers, solar/ESS, motor control, and industrial power supplies. It features an industry-standard Top Side Cooled (TSC) package with a maximum power dissipation of 206 W at 25°C case temperature and a junction temperature range of -55°C to 175°C. The device has a typical on-state resistance of 45 mΩ at 18V gate-source voltage and 25°C, with a peak pulsed drain current of 123 A. It includes a separate driver source pin for reduced gate ringing and a soft body diode to minimize voltage overshoots. The MOSFET is RoHS compliant and operates with a recommended gate drive voltage of +15V to +18V.
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
| Richardson RFPD | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C4MV045065T-TR |
| Product Name | Silicon Carbide MOSFETs |
| rDS(on) | 0.0450 ohms |
