C4MV025065T-TR is a 650V, 25mΩ N-channel enhancement mode silicon carbide power MOSFET in a Top Side Cooled (TSC) package, optimized for high-speed switching and high power density applications such as EV chargers, solar/ESS, motor control, and industrial power supplies. It features a separate driver source pin, soft body diode behavior, and industry-standard gate drive voltage range of +15V to +18V. Continuous drain current is 59A at 100°C, with a maximum power dissipation of 333W at 25°C case temperature. Thermal resistance from junction to case is 0.33°C/W. Operating junction and storage temperatures range from -55°C to 175°C. The device is RoHS compliant and halogen free.
25M 650V SIC MOSFET
25M 650V SIC MOSFET
25M 650V SIC MOSFET
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
| DigiKey | Richardson RFPD | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1697-C4MV025065T-TR-ND | C4MV025065T-TR |
| Product Name | Single FETs, MOSFETs | Silicon Carbide MOSFETs |
| rDS(on) | 0.0250 ohms |
