Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single C3M0280090J

Description
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324546-C3M0280090J Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Surface Mount Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Power Dissipation (Max): 50W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V Vgs (Max): +18V, -8V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA ECCN: EAR99 Fake Threat In the Open Market: 71 MSL Level: 3 (168 Hours) HTSUS: 8541.29.0095 Base Product Number: C3M0280090 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: RoHS Compliant
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324546-C3M0280090J - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - C3M0280090J-ND - DigiKey
    DigiKey
  • MOSFETs - 1923382 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1923509 - RS Components, Ltd.
    RS Components, Ltd.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0280090J - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 900V, 11A, To-263; Mosfet Module Configuration Wolfspeed - 98Y6021 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324546-C3M0280090J Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Surface Mount Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Power Dissipation (Max): 50W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V Vgs (Max): +18V, -8V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA ECCN: EAR99 Fake Threat In the Open Market: 71 MSL Level: 3 (168 Hours) HTSUS: 8541.29.0095 Base Product Number: C3M0280090 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: RoHS Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324546-C3M0280090J - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324546-C3M0280090J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324546-C3M0280090J
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324546-C3M0280090J Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Surface Mount Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Power Dissipation (Max): 50W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V Vgs (Max): +18V, -8V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA ECCN: EAR99 Fake Threat In the Open Market: 71 MSL Level: 3 (168 Hours) HTSUS: 8541.29.0095 Base Product Number: C3M0280090 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: RoHS Compliant

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324546-C3M0280090J
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 50
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: TO-263-7
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
Vgs (Max): +18V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 71
MSL Level: 3 (168 Hours)
HTSUS: 8541.29.0095
Base Product Number: C3M0280090
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant

Buy Now Datasheet
Single FETs, MOSFETs - C3M0280090J-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
C3M0280090J-ND
Single FETs, MOSFETs C3M0280090J-ND
N-Channel 900V 11A (Tc) 50W (Tc) Surface Mount D2PAK-7

N-Channel 900V 11A (Tc) 50W (Tc) Surface Mount D2PAK-7

Buy Now Datasheet
MOSFETs - 1923382 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1923382
MOSFETs 1923382
MOSFET G3 SiC MOSFET 900V, 280 mOhm

MOSFET G3 SiC MOSFET 900V, 280 mOhm

Supplier's Site
MOSFETs - 1923509 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1923509
MOSFETs 1923509
MOSFET G3 SiC MOSFET 900V, 280 mOhm

MOSFET G3 SiC MOSFET 900V, 280 mOhm

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0280090J - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0280090J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0280090J
SICFET N-CH 900V 11A D2PAK-7

SICFET N-CH 900V 11A D2PAK-7

Supplier's Site
Mosfet, N-Ch, 900V, 11A, To-263; Mosfet Module Configuration Wolfspeed - 98Y6021 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 11A, To-263; Mosfet Module Configuration Wolfspeed
98Y6021
Mosfet, N-Ch, 900V, 11A, To-263; Mosfet Module Configuration Wolfspeed 98Y6021
MOSFET, N-CH, 900V, 11A, TO-263; MOSFET Module Configuration:Single ; Continuous Drain Current Id:11A; Drain Source Voltage Vds:900V; No. of Pins:7Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

MOSFET, N-CH, 900V, 11A, TO-263; MOSFET Module Configuration:Single; Continuous Drain Current Id:11A; Drain Source Voltage Vds:900V; No. of Pins:7Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C3M0280090J
MOSFET C3M0280090J
MOSFET G3 SiC MOSFET 900V, 280 mOhm

MOSFET G3 SiC MOSFET 900V, 280 mOhm

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1324546-C3M0280090J C3M0280090J-ND 1923382 C3M0280090J 98Y6021 C3M0280090J
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 900V, 11A, To-263; Mosfet Module Configuration Wolfspeed MOSFET
Polarity N-Channel N-Channel N-Channel
Package Type TO-263; SOT3; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA TO-263; To-263 TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA TO-3; TO-263
Transistor Technology / Material Silicon Carbide
MOSFET Operating Mode Enhancement
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