Wolfspeed Silicon Carbide Power MOSFET C3MTM Planar MOSFET Technology N-Channel Enhancement Mode C3M0280090D

Description
Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions. Features High speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
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Description
Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions. Features High speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Power MOSFET C3MTM Planar MOSFET Technology N-Channel Enhancement Mode - C3M0280090D - Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C3MTM Planar MOSFET Technology N-Channel Enhancement Mode
C3M0280090D
Silicon Carbide Power MOSFET C3MTM Planar MOSFET Technology N-Channel Enhancement Mode C3M0280090D
Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions. Features High speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive

Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

Features

  • High speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Supplier's Site Datasheet
Single FETs, MOSFETs - C3M0280090D-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
C3M0280090D-ND
Single FETs, MOSFETs C3M0280090D-ND
N-Channel 900V 11.5A (Tc) 54W (Tc) Through Hole TO-247-3

N-Channel 900V 11.5A (Tc) 54W (Tc) Through Hole TO-247-3

Buy Now Datasheet
MOSFETs - 9158842 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9158842
MOSFETs 9158842
N-chan SiC MOSFET 900V 11.5A TO247

N-chan SiC MOSFET 900V 11.5A TO247

Supplier's Site
MOSFETs - 9158842P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9158842P
MOSFETs 9158842P
N-chan SiC MOSFET 900V 11.5A TO247

N-chan SiC MOSFET 900V 11.5A TO247

Supplier's Site
MOSFETs - 1629714 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1629714
MOSFETs 1629714
N-chan SiC MOSFET 900V 11.5A TO247

N-chan SiC MOSFET 900V 11.5A TO247

Supplier's Site
Single FETs, MOSFETs - C3M0280090D - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0280090D
Single FETs, MOSFETs C3M0280090D
SICFET N-CH 900V 11.5A TO247-3

SICFET N-CH 900V 11.5A TO247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1050837-C3M0280090D - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1050837-C3M0280090D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1050837-C3M0280090D
Win Source Part Number: 1050837-C3M0280090D Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: C3M™ Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Power Dissipation (Max): 54W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V Vgs (Max): +18V, -8V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW12NK90Z; IPW90R500C3FKSA1; IPW65R190C7XKSA1; STW15N80K5; IPW65R280E6FKSA1; STW11NK90Z; ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Wolfspeed, Inc. Base Product Number: C3M0280090 Drive Voltage (Max Rds On, Min Rds On): 15V

Win Source Part Number: 1050837-C3M0280090D
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: C3M™
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 54W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
Vgs (Max): +18V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STW12NK90Z; IPW90R500C3FKSA1; IPW65R190C7XKSA1; STW15N80K5; IPW65R280E6FKSA1; STW11NK90Z;
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Wolfspeed, Inc.
Base Product Number: C3M0280090
Drive Voltage (Max Rds On, Min Rds On): 15V

Buy Now Datasheet
Singapore
900V 11.5A MOSFET Transistor
278-C3M0280090D
900V 11.5A MOSFET Transistor 278-C3M0280090D
SICFET N-CH 900V 11.5A TO247-3 Product overview: C3M0280090D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 11.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 11.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0280090D can be used for catalog matching and distributor lookup.

SICFET N-CH 900V 11.5A TO247-3 Product overview: C3M0280090D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 11.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 11.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0280090D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET G3 SiC MOSFET 900V, 280mOhm

MOSFET G3 SiC MOSFET 900V, 280mOhm

Buy Now Datasheet
Mosfet, N-Ch, 900V, 11.5A, To-247; Mosfet Module Configuration Wolfspeed - 98Y6020 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 11.5A, To-247; Mosfet Module Configuration Wolfspeed
98Y6020
Mosfet, N-Ch, 900V, 11.5A, To-247; Mosfet Module Configuration Wolfspeed 98Y6020
MOSFET, N-CH, 900V, 11.5A, TO-247; MOSFET Module Configuration:Single ; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:900V; No. of Pins:3Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

MOSFET, N-CH, 900V, 11.5A, TO-247; MOSFET Module Configuration:Single; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:900V; No. of Pins:3Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0280090D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0280090D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0280090D
SICFET N-CH 900V 11.5A TO247-3

SICFET N-CH 900V 11.5A TO247-3

Supplier's Site

Technical Specifications

  Wolfspeed DigiKey RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number C3M0280090D C3M0280090D-ND 9158842 9158842P C3M0280090D 1050837-C3M0280090D 278-C3M0280090D C3M0280090D 98Y6020 C3M0280090D
Product Name Silicon Carbide Power MOSFET C3MTM Planar MOSFET Technology N-Channel Enhancement Mode Single FETs, MOSFETs MOSFETs MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 900V 11.5A MOSFET Transistor MOSFET Mosfet, N-Ch, 900V, 11.5A, To-247; Mosfet Module Configuration Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material Silicon Carbide Power MOSFET C3MTM Planar MOSFET Technology N-Channel Enhancement Mode Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-247-3 TO-247; TO-247-3 TO-247; To-247 TO-247; TO-247 TO-247; TO-247-3 TO-247; SOT3 Tube TO-3; TO-247 TO-247; TO-247-3
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement Enhancement
Number of units in IC 1
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