Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
Features
SICFET N-CH 900V 22A D2PAK-7 Product overview: C3M0120090J from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0120090J can be used for catalog matching and distributor lookup.
N-Channel 900V 22A (Tc) 83W (Tc) Surface Mount D2PAK-7
MOSFET G3 SiC MOSFET 900V, 120 mOhm
MOSFET G3 SiC MOSFET 900V, 120 mOhm
SICFET N-CH 900V 22A D2PAK-7
Manufacturer: Cree/Wolfspeed
Win Source Part Number: 865610-C3M0120090J
Series: C3M™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 900 V 22A (Tc) 83W (Tc) Surface Mount D2PAK-7
Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Package: Tube
Mounting: Surface Mount
Family Name: C3M0120090
Categories: Discrete Semiconductor Products
Case / Package: D2PAK-7
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 88 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 29 Weeks
HTSUS: 8541.29.0095
Other Part Number: C3M0120090J-ND, 1697-C3M0120090J, -3312-C3M0120090J
MOSFET, N-CH, 900V, 22A, TO-263; MOSFET Module Configuration:Single
MOSFET G3 SiC MOSFET 900V, 120 mOhm
SICFET N-CH 900V 22A D2PAK-7
| Wolfspeed | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | C3M0120090J | 278-C3M0120090J | 1697-C3M0120090J-ND | 1923492 | C3M0120090J | 865610-C3M0120090J | 98Y6019 | C3M0120090J | C3M0120090J |
| Product Name | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | 900V 22A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0120090J | Mosfet, N-Ch, 900V, 22A, To-263; Mosfet Module Configuration Wolfspeed | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | Silicon Carbide | SiCFET (Silicon Carbide) | ||||||
| Package Type | TO-263-7 | Tube | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263; To-263 | TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SOT3; D2PAK-7 | TO-3; TO-263 | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| V(BR)DSS | 900 volts | 900 volts |
