Wolfspeed Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode C3M0120090J

Description
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions. Features New low-impedance package with driver source High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
  • Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - C3M0120090J - Wolfspeed
    Wolfspeed
  • Silicon Carbide MOSFETs - C3M0120090J - Richardson RFPD
    Richardson RFPD
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0120090J - 865610-C3M0120090J - Win Source Electronics
    Win Source Electronics
  • MOSFETs - 1923492 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1923378 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - 1697-C3M0120090J-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - C3M0120090J - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0120090J - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 900V, 22A, To-263; Mosfet Module Configuration Wolfspeed - 98Y6019 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions. Features New low-impedance package with driver source High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
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Datasheet
Datasheet Summary
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C3M0120090J is a 900-V silicon carbide N-channel enhancement mode MOSFET designed for high-efficiency power conversion in applications such as renewable energy, telecom power supplies, and DC/DC converters. It is packaged in a TO-263-7 surface-mount case with a drain tab, measuring 10.23 mm max width, 9.125 mm max length, and 17.313 mm max height. The device has a maximum continuous drain current of 14 A at 100 °C case temperature and a drain-source on-state resistance of 120 mΩ at 25 °C and 170 mΩ at 150 °C. It supports a maximum junction temperature of 150 °C and has a thermal resistance from junction to case of 1.5 °C/W. The component is RoHS compliant and features a low gate charge of 18 nC and a fast body diode with reverse recovery charge of 72 nC at 150 °C.

Datasheet Summary
Powered by GS/AI

C3M0120090J is a 900-V silicon carbide N-channel enhancement mode MOSFET designed for high-efficiency power conversion in applications such as renewable energy, telecom power supplies, and DC/DC converters. It is packaged in a TO-263-7 surface-mount case with a drain tab, measuring 10.23 mm max width, 9.125 mm max length, and 17.313 mm max height. The device has a maximum continuous drain current of 14 A at 100 °C case temperature and a drain-source on-state resistance of 120 mΩ at 25 °C and 170 mΩ at 150 °C. It supports a maximum junction temperature of 150 °C and has a thermal resistance from junction to case of 1.5 °C/W. The component is RoHS compliant and features a low gate charge of 18 nC and a fast body diode with reverse recovery charge of 72 nC at 150 °C.

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - C3M0120090J - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0120090J
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode C3M0120090J
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions. Features New low-impedance package with driver source High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

Features

  • New low-impedance package with driver source
  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
900V 22A MOSFET Transistor
278-C3M0120090J
900V 22A MOSFET Transistor 278-C3M0120090J
SICFET N-CH 900V 22A D2PAK-7 Product overview: C3M0120090J from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0120090J can be used for catalog matching and distributor lookup.

SICFET N-CH 900V 22A D2PAK-7 Product overview: C3M0120090J from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0120090J can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Silicon Carbide MOSFETs - C3M0120090J - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0120090J
Silicon Carbide MOSFETs C3M0120090J
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy Lighting High voltage DC/DC converters Switch Mode Power Supplies EV Battery Chargers

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Features

  • New C3M SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • New low impedance package with driver source
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • Lighting
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
  • EV Battery Chargers
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0120090J - 865610-C3M0120090J - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0120090J
865610-C3M0120090J
TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0120090J 865610-C3M0120090J
Manufacturer: Cree/Wolfspeed Win Source Part Number: 865610-C3M0120090J Series: C3M™ Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 900 V 22A (Tc) 83W (Tc) Surface Mount D2PAK-7 Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA Package: Tube Mounting: Surface Mount Family Name: C3M0120090 Categories: Discrete Semiconductor Products Case / Package: D2PAK-7 ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 88 pct. Supply and Demand Status: Limited Quantity per package: 50 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 29 Weeks HTSUS: 8541.29.0095 Other Part Number: C3M0120090J-ND, 1697-C3M0120090J, -3312-C3M0120090J

Manufacturer: Cree/Wolfspeed
Win Source Part Number: 865610-C3M0120090J
Series: C3M™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 900 V 22A (Tc) 83W (Tc) Surface Mount D2PAK-7
Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Package: Tube
Mounting: Surface Mount
Family Name: C3M0120090
Categories: Discrete Semiconductor Products
Case / Package: D2PAK-7
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 88 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 29 Weeks
HTSUS: 8541.29.0095
Other Part Number: C3M0120090J-ND, 1697-C3M0120090J, -3312-C3M0120090J

Buy Now Datasheet
MOSFETs - 1923492 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1923492
MOSFETs 1923492
MOSFET G3 SiC MOSFET 900V, 120 mOhm

MOSFET G3 SiC MOSFET 900V, 120 mOhm

Supplier's Site
MOSFETs - 1923378 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1923378
MOSFETs 1923378
MOSFET G3 SiC MOSFET 900V, 120 mOhm

MOSFET G3 SiC MOSFET 900V, 120 mOhm

Supplier's Site
Single FETs, MOSFETs - 1697-C3M0120090J-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120090J-ND
Single FETs, MOSFETs 1697-C3M0120090J-ND
N-Channel 900V 22A (Tc) 83W (Tc) Surface Mount D2PAK-7

N-Channel 900V 22A (Tc) 83W (Tc) Surface Mount D2PAK-7

Buy Now Datasheet
Single FETs, MOSFETs - C3M0120090J - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0120090J
Single FETs, MOSFETs C3M0120090J
SICFET N-CH 900V 22A D2PAK-7

SICFET N-CH 900V 22A D2PAK-7

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0120090J - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0120090J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0120090J
SICFET N-CH 900V 22A D2PAK-7

SICFET N-CH 900V 22A D2PAK-7

Supplier's Site
Mosfet, N-Ch, 900V, 22A, To-263; Mosfet Module Configuration Wolfspeed - 98Y6019 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 22A, To-263; Mosfet Module Configuration Wolfspeed
98Y6019
Mosfet, N-Ch, 900V, 22A, To-263; Mosfet Module Configuration Wolfspeed 98Y6019
MOSFET, N-CH, 900V, 22A, TO-263; MOSFET Module Configuration:Single ; Continuous Drain Current Id:22A; Drain Source Voltage Vds:900V; No. of Pins:7Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

MOSFET, N-CH, 900V, 22A, TO-263; MOSFET Module Configuration:Single; Continuous Drain Current Id:22A; Drain Source Voltage Vds:900V; No. of Pins:7Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C3M0120090J
MOSFET C3M0120090J
MOSFET G3 SiC MOSFET 900V, 120 mOhm

MOSFET G3 SiC MOSFET 900V, 120 mOhm

Buy Now Datasheet

Technical Specifications

  Wolfspeed ERSAELECTRONICS PTE. LTD. Richardson RFPD Win Source Electronics RS Components, Ltd. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number C3M0120090J 278-C3M0120090J C3M0120090J 865610-C3M0120090J 1923492 1697-C3M0120090J-ND C3M0120090J C3M0120090J 98Y6019 C3M0120090J
Product Name Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode 900V 22A MOSFET Transistor Silicon Carbide MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0120090J MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 900V, 22A, To-263; Mosfet Module Configuration Wolfspeed MOSFET
Transistor Technology / Material Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-263-7 Tube TO-263-7 SOT3; D2PAK-7 TO-263; To-263 TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA TO-3; TO-263
Polarity N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 900 volts 900 volts
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