Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster.
Features
N-Channel 1000V 35A (Tc) 113.5W (Tc) Surface Mount D2PAK-7
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325246-C3M0065100J
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 50
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Power Dissipation (Max): 113.5W (Tc)
Supplier Device Package: D2PAK-7
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 3 (168 Hours)
HTSUS: 8541.29.0095
Base Product Number: C3M0065100
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant
SICFET N-CH 1000V 35A D2PAK-7
MOSFET, N-CH, 1KV, 35A, TO-263; MOSFET Module Configuration:Single
MOSFET 1000V 65mOhm G3 SiC MOSFET TO-263-7
| Wolfspeed | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0065100J | C3M0065100J-ND | 1325246-C3M0065100J | C3M0065100J | 16AC3236 | C3M0065100J |
| Product Name | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 1Kv, 35A, To-263; Mosfet Module Configuration Wolfspeed | MOSFET |
| Transistor Technology / Material | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | Silicon Carbide |
