Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster.
Features
SICFET N-CH 1000V 35A D2PAK-7 Product overview: C3M0065100J from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0065100J can be used for catalog matching and distributor lookup.
N-Channel 1000V 35A (Tc) 113.5W (Tc) Surface Mount D2PAK-7
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325246-C3M0065100J
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 50
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Power Dissipation (Max): 113.5W (Tc)
Supplier Device Package: D2PAK-7
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 3 (168 Hours)
HTSUS: 8541.29.0095
Base Product Number: C3M0065100
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant
MOSFET 1000V 65mOhm G3 SiC MOSFET TO-263-7
MOSFET, N-CH, 1KV, 35A, TO-263; MOSFET Module Configuration:Single
SICFET N-CH 1000V 35A D2PAK-7
| Wolfspeed | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | C3M0065100J | 278-C3M0065100J | C3M0065100J-ND | 1325246-C3M0065100J | C3M0065100J | 16AC3236 | C3M0065100J |
| Product Name | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | 1000V 35A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Mosfet, N-Ch, 1Kv, 35A, To-263; Mosfet Module Configuration Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | Silicon Carbide | |||||
| Package Type | TO-263-7 | Tube | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263; SOT3; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-3; TO-263 | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 1000 volts |
