Silicon Carbide Power MOSFET
Features
3rd generation SiC MOSFET technology
Optimized package with separate driver source pin
Larger drain tab for better thermal performance
High blocking voltage with low on-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Applications
Motor Control
EV battery chargers
High voltage DC/DC converters
Silicon Carbide Power MOSFET
Features
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- Larger drain tab for better thermal performance
- High blocking voltage with low on-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS compliant
Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
Applications
- Motor Control
- EV battery chargers
- High voltage DC/DC converters
