Wolfspeed Silicon Carbide MOSFETs C3M0032120J1-TR

Description
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch
  • Silicon Carbide MOSFETs - C3M0032120J1-TR - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-C3M0032120J1-TRCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-C3M0032120J1-TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-C3M0032120J1-TRDKR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0032120J1-TR - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0032120J1-TR
Silicon Carbide MOSFETs C3M0032120J1-TR
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Solar inverters
  • EV motor drive
  • High voltage DC/DC converters
  • Switched mode power supplies
  • Load switch
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0032120J1-TRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0032120J1-TRCT-ND
Single FETs, MOSFETs 1697-C3M0032120J1-TRCT-ND
SIC, MOSFET, 32M, 1200V, TO-263-

SIC, MOSFET, 32M, 1200V, TO-263-

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0032120J1-TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0032120J1-TR-ND
Single FETs, MOSFETs 1697-C3M0032120J1-TR-ND
SIC, MOSFET, 32M, 1200V, TO-263-

SIC, MOSFET, 32M, 1200V, TO-263-

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0032120J1-TRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0032120J1-TRDKR-ND
Single FETs, MOSFETs 1697-C3M0032120J1-TRDKR-ND
SIC, MOSFET, 32M, 1200V, TO-263-

SIC, MOSFET, 32M, 1200V, TO-263-

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number C3M0032120J1-TR 1697-C3M0032120J1-TRCT-ND
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs
rDS(on) 0.0320 ohms
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