Wolfspeed Silicon Carbide MOSFETs C3M0021120U2-TR

Description
SiC, MOSFET, 21 mOhm,1200V, TSC (U2), Industrial
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Description
SiC, MOSFET, 21 mOhm,1200V, TSC (U2), Industrial
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Datasheet
Datasheet Summary
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The C3M0021120U2 is a 1200V, 21mΩ silicon carbide N-channel enhancement mode MOSFET in an industry-standard Top Side Cooled (TSC) package, designed for high-efficiency power conversion in applications such as EV chargers, solar/ESS systems, and industrial power supplies. It features a separate driver source pin for reduced gate ringing, low capacitances for high-speed switching, and a fast intrinsic diode with low reverse recovery charge. The device supports a continuous drain current of 84 A at 100°C case temperature and a maximum power dissipation of 500 W at 25°C case temperature. Thermal resistance from junction to case is 0.23-0.30 °C/W. Operating junction and storage temperatures range from -55°C to +175°C. The package dimensions are defined by the U2PAK outline, with a maximum height of 19.00 mm and a body size of 14.12 mm × 11.75 mm. It is RoHS compliant and halogen-free.

Datasheet Summary
Powered by GS/AI

The C3M0021120U2 is a 1200V, 21mΩ silicon carbide N-channel enhancement mode MOSFET in an industry-standard Top Side Cooled (TSC) package, designed for high-efficiency power conversion in applications such as EV chargers, solar/ESS systems, and industrial power supplies. It features a separate driver source pin for reduced gate ringing, low capacitances for high-speed switching, and a fast intrinsic diode with low reverse recovery charge. The device supports a continuous drain current of 84 A at 100°C case temperature and a maximum power dissipation of 500 W at 25°C case temperature. Thermal resistance from junction to case is 0.23-0.30 °C/W. Operating junction and storage temperatures range from -55°C to +175°C. The package dimensions are defined by the U2PAK outline, with a maximum height of 19.00 mm and a body size of 14.12 mm × 11.75 mm. It is RoHS compliant and halogen-free.

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0021120U2-TR - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0021120U2-TR
Silicon Carbide MOSFETs C3M0021120U2-TR
SiC, MOSFET, 21 mOhm,1200V, TSC (U2), Industrial

SiC, MOSFET, 21 mOhm,1200V, TSC (U2), Industrial

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number C3M0021120U2-TR
Product Name Silicon Carbide MOSFETs
rDS(on) 0.0210 ohms
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