The C3M0021120U2 is a 1200V, 21mΩ silicon carbide N-channel enhancement mode MOSFET in an industry-standard Top Side Cooled (TSC) package, designed for high-efficiency power conversion in applications such as EV chargers, solar/ESS systems, and industrial power supplies. It features a separate driver source pin for reduced gate ringing, low capacitances for high-speed switching, and a fast intrinsic diode with low reverse recovery charge. The device supports a continuous drain current of 84 A at 100°C case temperature and a maximum power dissipation of 500 W at 25°C case temperature. Thermal resistance from junction to case is 0.23-0.30 °C/W. Operating junction and storage temperatures range from -55°C to +175°C. The package dimensions are defined by the U2PAK outline, with a maximum height of 19.00 mm and a body size of 14.12 mm × 11.75 mm. It is RoHS compliant and halogen-free.
SiC, MOSFET, 21 mOhm,1200V, TSC (U2), Industrial
| Richardson RFPD | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0021120U2-TR |
| Product Name | Silicon Carbide MOSFETs |
| rDS(on) | 0.0210 ohms |