Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Features
Optimized package with separate driver source pin
Lower profile TO-247-4 package body
High blocking voltage with low on-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
Applications
Motor Control
EV Battery Chargers
High voltage DC/DC converters
Solar/ESS
UPS
Enterprise PSU
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Features
- Optimized package with separate driver source pin
- Lower profile TO-247-4 package body
- High blocking voltage with low on-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS compliant
Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency
Applications
- Motor Control
- EV Battery Chargers
- High voltage DC/DC converters
- Solar/ESS
- UPS
- Enterprise PSU
