The C3M0016120D is an N-Channel Silicon Carbide (SiC) Power MOSFET designed for high voltage applications with a maximum drain-source voltage of 1200 V and a continuous drain current rating of 115 A at 25¬8C. It features a low on-state resistance of 16 m,Ѷ, which contributes to reduced switching losses and improved system efficiency. The device is rated for a maximum power dissipation of 556 W and can operate at junction temperatures up to 175¬8C. This MOSFET is suitable for various applications, including solar inverters, electric vehicle motor drives, high voltage DC/DC converters, and switched mode power supplies. It is RoHS compliant and utilizes third-generation SiC technology, which allows for high-speed switching with low capacitances. The device also includes a fast intrinsic diode with low reverse recovery characteristics, enhancing its performance in switching applications. The C3M0016120D is packaged in a TO-247-3 format, making it compatible with standard mounting techniques. Its thermal resistance from junction to case is 0.27¬8C/W, facilitating effective heat management in high-power applications.
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324429-C3M0016120D
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Power Dissipation (Max): 556W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 73
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: -3312-C3M0016120D,16
Base Product Number: C3M0016120
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: ROHS3 Compliant
N-Channel 1200V 115A (Tc) 556W (Tc) Through Hole TO-247-3
SICFET N-CH 1200V 115A TO247-3 Product overview: C3M0016120D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 115A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 115A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0016120D can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 1.2KV, 175DEG C, 556W ROHS COMPLIANT: YES
SICFET N-CH 1200V 115A TO247-3
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1324429-C3M0016120D | 1697-C3M0016120D-ND | 278-C3M0016120D | 40AH1118 | C3M0016120D |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 1200V 115A MOSFET Transistor | Mosfet, N-Ch, 1.2Kv, 175Deg C, 556W Rohs Compliant Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | Tube | TO-3 | TO-247; TO-247-3 |
| Transistor Technology / Material | Silicon Carbide | ||||
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 1200 volts |
