The C3M0016120D is an N-Channel Silicon Carbide (SiC) Power MOSFET designed for high voltage applications with a maximum drain-source voltage of 1200 V and a continuous drain current rating of 115 A at 25°C. It features a low on-state resistance of 16 m,Ѷ, which contributes to reduced switching losses and improved system efficiency. The device is rated for a maximum power dissipation of 556 W and can operate at junction temperatures up to 175°C. This MOSFET is suitable for various applications, including solar inverters, electric vehicle motor drives, high voltage DC/DC converters, and switched mode power supplies. It is RoHS compliant and utilizes third-generation SiC technology, which allows for high-speed switching with low capacitances. The device also includes a fast intrinsic diode with low reverse recovery characteristics, enhancing its performance in switching applications. The C3M0016120D is packaged in a TO-247-3 format, making it compatible with standard mounting techniques. Its thermal resistance from junction to case is 0.27°C/W, facilitating effective heat management in high-power applications.
SICFET N-CH 1200V 115A TO247-3 Product overview: C3M0016120D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 115A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 115A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0016120D can be used for catalog matching and distributor lookup.
N-Channel 1200V 115A (Tc) 556W (Tc) Through Hole TO-247-3
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324429-C3M0016120D
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Power Dissipation (Max): 556W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 73
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: -3312-C3M0016120D,16
Base Product Number: C3M0016120
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: ROHS3 Compliant
Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. The new family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.
Features
Applications
MOSFET, N-CH, 1.2KV, 175DEG C, 556W ROHS COMPLIANT: YES
SICFET N-CH 1200V 115A TO247-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Richardson RFPD | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-C3M0016120D | 1697-C3M0016120D-ND | 1324429-C3M0016120D | C3M0016120D | 40AH1118 | C3M0016120D |
| Product Name | 1200V 115A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Silicon Carbide MOSFETs | Mosfet, N-Ch, 1.2Kv, 175Deg C, 556W Rohs Compliant Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 1200 volts | |||||
| Transconductance | 0.0530 kS | |||||
| PD | 556 milliwatts |
