Wolfspeed 2nd Generation Z-FET™ 1700V, 1000 mΩ, Silicon-Carbide MOSFET C2M1000170J

Description
Features High blocking voltage with low RDS(on) Easy to parallel and simple to drive Low parasitic inductance Surface mount package with separate driver pin
Request a Quote Datasheet
Description
Features High blocking voltage with low RDS(on) Easy to parallel and simple to drive Low parasitic inductance Surface mount package with separate driver pin
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
2nd Generation Z-FET™ 1700V, 1000 mΩ, Silicon-Carbide MOSFET - C2M1000170J - Wolfspeed
Durham, NC, United States
2nd Generation Z-FET™ 1700V, 1000 mΩ, Silicon-Carbide MOSFET
C2M1000170J
2nd Generation Z-FET™ 1700V, 1000 mΩ, Silicon-Carbide MOSFET C2M1000170J
Features High blocking voltage with low RDS(on) Easy to parallel and simple to drive Low parasitic inductance Surface mount package with separate driver pin

Features

  • High blocking voltage with low RDS(on)
  • Easy to parallel and simple to drive
  • Low parasitic inductance
  • Surface mount package with separate driver pin
Supplier's Site Datasheet
MOSFETs - 9158833 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9158833
MOSFETs 9158833
N-chan SiC MOSFET 1700V 5.3A D2PAK-7

N-chan SiC MOSFET 1700V 5.3A D2PAK-7

Supplier's Site
MOSFETs - 9158833P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9158833P
MOSFETs 9158833P
N-chan SiC MOSFET 1700V 5.3A D2PAK-7

N-chan SiC MOSFET 1700V 5.3A D2PAK-7

Supplier's Site
MOSFETs - 1629710 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1629710
MOSFETs 1629710
N-chan SiC MOSFET 1700V 5.3A D2PAK-7

N-chan SiC MOSFET 1700V 5.3A D2PAK-7

Supplier's Site
Single FETs, MOSFETs - C2M1000170J-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
C2M1000170J-ND
Single FETs, MOSFETs C2M1000170J-ND
N-Channel 1700V 5.3A (Tc) 78W (Tc) Surface Mount D2PAK (7-Lead)

N-Channel 1700V 5.3A (Tc) 78W (Tc) Surface Mount D2PAK (7-Lead)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277486-C2M1000170J - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277486-C2M1000170J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277486-C2M1000170J
Win Source Part Number: 1277486-C2M1000170J Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: C2M™ Package: Bulk Standard Package: 50 Mounting: SMD (SMT) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ) Power Dissipation (Max): 78W (Tc) Package / Case: TO-263-7 (Straight Leads) Supplier Device Package: D2PAK (7-Lead) Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V Vgs (Max): +25V, -10V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 3 (168 Hours) HTSUS: 8541.29.0095 Mfr: Wolfspeed, Inc. Base Product Number: C2M1000170 Drive Voltage (Max Rds On, Min Rds On): 20V

Win Source Part Number: 1277486-C2M1000170J
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: C2M™
Package: Bulk
Standard Package: 50
Mounting: SMD (SMT)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
Power Dissipation (Max): 78W (Tc)
Package / Case: TO-263-7 (Straight Leads)
Supplier Device Package: D2PAK (7-Lead)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
Vgs (Max): +25V, -10V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 3 (168 Hours)
HTSUS: 8541.29.0095
Mfr: Wolfspeed, Inc.
Base Product Number: C2M1000170
Drive Voltage (Max Rds On, Min Rds On): 20V

Buy Now Datasheet
Single FETs, MOSFETs - C2M1000170J - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C2M1000170J
Single FETs, MOSFETs C2M1000170J
SICFET N-CH 1700V 5.3A D2PAK

SICFET N-CH 1700V 5.3A D2PAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET SIC MOSFET 1700V RDS ON 1 Ohm

MOSFET SIC MOSFET 1700V RDS ON 1 Ohm

Buy Now Datasheet
Mosfet, N-Ch, 1.7Kv, 5.3A, To-263; Mosfet Module Configuration Wolfspeed - 98Y6014 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.7Kv, 5.3A, To-263; Mosfet Module Configuration Wolfspeed
98Y6014
Mosfet, N-Ch, 1.7Kv, 5.3A, To-263; Mosfet Module Configuration Wolfspeed 98Y6014
MOSFET, N-CH, 1.7KV, 5.3A, TO-263; MOSFET Module Configuration:Single ; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:1.7kV; No. of Pins:7Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes

MOSFET, N-CH, 1.7KV, 5.3A, TO-263; MOSFET Module Configuration:Single; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:1.7kV; No. of Pins:7Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C2M1000170J - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C2M1000170J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C2M1000170J
SICFET N-CH 1700V 5.3A D2PAK

SICFET N-CH 1700V 5.3A D2PAK

Supplier's Site

Technical Specifications

  Wolfspeed RS Components, Ltd. RS Components, Ltd. DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number C2M1000170J 9158833 9158833P C2M1000170J-ND 1277486-C2M1000170J C2M1000170J C2M1000170J 98Y6014 C2M1000170J
Product Name 2nd Generation Z-FET™ 1700V, 1000 mΩ, Silicon-Carbide MOSFET MOSFETs MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 1.7Kv, 5.3A, To-263; Mosfet Module Configuration Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material 2nd Generation Z-FET™ 1700V, 1000 mΩ, Silicon-Carbide MOSFET Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-263-7 TO-263; D2pak (to-263) TO-263; TO-263 TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA SOT3 TO-263; TO-263-7 (Straight Leads) TO-3; TO-263 TO-263; TO-263-7 (Straight Leads)
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
Number of units in IC 1
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