Comchip Technology Corporation Bipolar Transistors - BJT BC847W-G

The BC847W-G is an NPN silicon bipolar transistor in a SOT-323 surface-mount package, measuring 2.20 mm x 1.10 mm x 0.90 mm, designed for general-purpose switching and amplification. It has a collector-emitter voltage rating of 45 V, a collector current of 100 mA, and a power dissipation of 150 mW at 25°C, with a thermal resistance of 833 °C/W. The transistor has a minimum DC current gain (hFE) of 150 at 10 μA and 200 at 2 mA, and a collector-emitter saturation voltage of 0.25 V at 10 mA collector current. The junction and storage temperature range is -55°C to +150°C. The device is RoHS compliant and meets MIL-STD-750 method 2026 for solderability.