Central Semiconductor Corp. Bipolar Transistors - BJT TIP32C

The TIP32C is a silicon PNP power transistor in a TO-220 package, designed for power amplifier and high-speed switching applications. It has a collector-emitter voltage rating of 100 V, a continuous collector current of 3.0 A, and a power dissipation of 40 W at TC=25°C. The transistor features a collector-emitter saturation voltage of 1.2 V at IC=3.0 A and IB=375 mA, and a DC current gain (hFE) ranging from 10 to 50 at IC=3.0 A. Operating and storage junction temperatures range from -65°C to +150°C. Thermal resistance is 3.13 °C/W from junction to case and 62.5 °C/W from junction to ambient. The package has a collector tab connected to the collector terminal.