Central Semiconductor Corp. Bipolar RF Transistors PN918 APM TIN/LEAD

The PN918 is an NPN silicon RF transistor in a TO-92 package, designed for high-frequency amplifier and oscillator applications. It has a collector-base voltage rating of 30 V, collector-emitter voltage of 15 V, and continuous collector current of 50 mA. Power dissipation is 625 mW at 25°C ambient temperature, with a thermal resistance of 200 °C/W. The transistor exhibits a transition frequency of 600 MHz at 100 MHz, a collector-emitter saturation voltage of 0.4 V, and a current gain (hFE) of 20 at VCE=1.0 V and IC=3.0 mA. The device operates from -65 °C to +150 °C and meets RoHS compliance.