Central Semiconductor Corp. Single Bipolar Transistors PN2369A TRE TIN/LEAD

The PN2369A is an epitaxial planar NPN silicon transistor designed for ultra high speed saturated switching applications, housed in a TO-92 package. It has a collector-emitter voltage rating of 15 V, a continuous collector current of 200 mA, and a power dissipation of 350 mW. The device exhibits a current gain (hFE) of 40 to 120 at IC=10 mA and VCE=1.0 V, with a collector-emitter saturation voltage of 250 mV at IC=30 mA and IB=3.0 mA. Transition frequency is 500 MHz at IC=10 mA and VCE=10 V. Operating and storage junction temperatures range from -65°C to +150°C. The part meets RoHS compliance standards.