Central Semiconductor Corp. Single Bipolar Transistors PN2369A TIN/LEAD

The PN2369A is an epitaxial planar NPN silicon transistor designed for ultra high speed saturated switching applications, housed in a TO-92 package. It has a collector-emitter voltage rating of 15 V, a continuous collector current of 200 mA, and a power dissipation of 350 mW. The transistor exhibits a transition frequency of 500 MHz, with a saturated collector-emitter voltage of 500 mV at 100 mA collector current and 10 mA base current. Current gain (hFE) ranges from 40 to 120 at 10 mA collector current. The operating and storage junction temperature range is -65°C to +150°C.