Central Semiconductor Corp. Bipolar Transistors - BJT PMD12K100

Description
Bipolar Transistors - BJT NPN 8.0A 100Vcev 100Vceo 2.0V 100W
Description
Bipolar Transistors - BJT NPN 8.0A 100Vcev 100Vceo 2.0V 100W
Datasheet
Datasheet Summary
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PMD12K100 is an NPN bipolar transistor in a TO-3 case, rated for a continuous collector current of 8.0 A and a power dissipation of 100 W. It has a collector-emitter breakdown voltage of 100 V, a collector-base breakdown voltage of 100 V, a collector-emitter saturation voltage of 2.0 V at 8.0 A, and a minimum DC current gain of 800 at 8.0 A. The transition frequency is 4.0 MHz. The device is designed for high-power switching applications.

Datasheet Summary
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PMD12K100 is an NPN bipolar transistor in a TO-3 case, rated for a continuous collector current of 8.0 A and a power dissipation of 100 W. It has a collector-emitter breakdown voltage of 100 V, a collector-base breakdown voltage of 100 V, a collector-emitter saturation voltage of 2.0 V at 8.0 A, and a minimum DC current gain of 800 at 8.0 A. The transition frequency is 4.0 MHz. The device is designed for high-power switching applications.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PMD12K100
Bipolar Transistors - BJT PMD12K100
Bipolar Transistors - BJT NPN 8.0A 100Vcev 100Vceo 2.0V 100W

Bipolar Transistors - BJT NPN 8.0A 100Vcev 100Vceo 2.0V 100W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number PMD12K100
Product Name Bipolar Transistors - BJT
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