Central Semiconductor Corp. Single Bipolar Transistors MPSA63 TIN/LEAD

The MPSA63 is a silicon PNP Darlington transistor in a TO-92 case, designed for applications requiring high gain. It has a collector-emitter voltage rating of 30 V, a continuous collector current of 500 mA, and a power dissipation of 625 mW. The operating and storage junction temperature ranges from -65 to +150 °C, with a thermal resistance of 200 °C/W. Current gain (hFE) ranges from 5 k to 50 k at 10 mA collector current and 5 V collector-emitter voltage. The emitter-base voltage is rated at 10 V. The device has a typical collector cutoff current of 100 nA at 30 V collector-base voltage.