Central Semiconductor Corp. Single Bipolar Transistors MPSA63 PBFREE

The MPSA63 is a silicon PNP Darlington transistor in a TO-92-3 package, designed for high-gain applications. It has a collector-emitter voltage rating of 30 V, a continuous collector current of 500 mA, and a power dissipation of 625 mW. The thermal resistance is 200 °C/W, with an operating temperature range of -65°C to +150°C. Current gain (hFE) ranges from 5 k to 10 k at IC = 10 mA and VCE = 5 V. Saturation voltage is up to 1.5 V at IC = 100 mA, and base-emitter voltage is up to 2.0 V at IB = 100 mA. Transition frequency is 125 MHz at IC = 100 mA. Collector-base leakage is 100 nA at 30 V, and emitter-base leakage is 100 nA at 10 V. The PBFREE suffix indicates lead-free plating. Output capacitance is 2.5 pF at 10 V.