Central Semiconductor Corp. Bipolar Transistors - BJT MPSA42 TRE

The MPSA42 is a silicon NPN transistor designed for high voltage applications, housed in a TO-92 package. It has a collector-base voltage rating of 300 V, a collector-emitter voltage rating of 300 V, and an emitter-base voltage rating of 6.0 V. The continuous collector current is 500 mA, and the power dissipation is 625 mW at 25°C. The thermal resistance from junction to ambient is 200 °C/W. The transistor has a minimum hFE of 25 at 1.0 mA collector current and 40 at 10 mA and 30 mA. Transition frequency is 50 MHz at 10 mA and 20 V collector-emitter voltage. The operating and storage junction temperature range is -65 to +150 °C.