Central Semiconductor Corp. Bipolar Transistors - BJT MPS750 BK

The MPS750 is a PNP silicon transistor in a TO-92 case designed for general purpose amplifier and switching applications requiring high gain at high collector current. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 40 V, and a continuous collector current of 2.0 A. Power dissipation is 625 mW at ambient temperature and 1.5 W at a case temperature of 25°C. The thermal resistance from junction to ambient is 200 °C/W. Current gain (hFE) is minimum 75 at collector currents up to 1.0 A and 40 at 2.0 A. Saturation voltage is 0.5 V at IC=2.0 A and IB=200 mA. Operating and storage junction temperature ranges from -65°C to +150°C.