Central Semiconductor Corp. Bipolar Transistors - BJT MPS6531

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Bipolar Transistors - BJT NPN Gen Pur SW
Description
Bipolar Transistors - BJT NPN Gen Pur SW
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The MPS6531 is an NPN silicon transistor in a TO-92 package for general purpose amplifier applications. It has a collector-emitter voltage rating of 40 V, a collector-base voltage of 60 V, and a continuous collector current of 600 mA. Power dissipation is 625 mW, with an operating and storage junction temperature range of -65 to +150 °C. Current gain (hFE) ranges from 90 to 270 at VCE=1.0 V and IC=100 mA, and 30 to 120 at VCE=1.0 V and IC=10 mA. The transition frequency is 300 MHz typical at VCE=10 V and IC=50 mA. Collector-emitter saturation voltage is 0.3 V maximum at IC=100 mA and IB=10 mA. The TO-92 case has pinout order: emitter, base, collector.

Datasheet Summary
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The MPS6531 is an NPN silicon transistor in a TO-92 package for general purpose amplifier applications. It has a collector-emitter voltage rating of 40 V, a collector-base voltage of 60 V, and a continuous collector current of 600 mA. Power dissipation is 625 mW, with an operating and storage junction temperature range of -65 to +150 °C. Current gain (hFE) ranges from 90 to 270 at VCE=1.0 V and IC=100 mA, and 30 to 120 at VCE=1.0 V and IC=10 mA. The transition frequency is 300 MHz typical at VCE=10 V and IC=50 mA. Collector-emitter saturation voltage is 0.3 V maximum at IC=100 mA and IB=10 mA. The TO-92 case has pinout order: emitter, base, collector.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MPS6531
Bipolar Transistors - BJT MPS6531
Bipolar Transistors - BJT NPN Gen Pur SW

Bipolar Transistors - BJT NPN Gen Pur SW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MPS6531
Product Name Bipolar Transistors - BJT
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