Central Semiconductor Corp. Bipolar Transistors - BJT MJE13005 SL

The MJE13005 is an NPN silicon power transistor in a JEDEC TO-220 package, designed for high-speed power switching applications. It has a collector-emitter voltage rating of 400 V and a peak collector-emitter voltage of 700 V, with a continuous collector current of 4.0 A and a maximum power dissipation of 75 W at 25°C ambient. The thermal resistance from junction to case is 1.67°C/W, and the operating and storage junction temperature ranges from -65°C to +150°C. The TO-220 package measures 14.70 mm in length and 10.60 mm in width, with a terminal pitch of 2.54 mm. The collector is connected to the mounting tab.