Central Semiconductor Corp. Bipolar Transistors - BJT CZT5401 BK

Description
Bipolar Transistors - BJT SS Transistor
Description
Bipolar Transistors - BJT SS Transistor
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The CZT5401 is a PNP silicon transistor in an SOT-223 package, designed for high voltage amplifier applications. It has a collector-base voltage rating of 160 V, a collector-emitter voltage of 150 V, and a continuous collector current of 600 mA with a power dissipation of 2.0 W. The operating and storage junction temperature range is -65 to +150°C. Thermal resistance is 62.5 °C/W. The device meets no specified industry standards. The SOT-223 package dimensions are provided with lead spacing from 1.50 to 1.80 mm and body length from 6.30 to 6.85 mm.

Datasheet Summary
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The CZT5401 is a PNP silicon transistor in an SOT-223 package, designed for high voltage amplifier applications. It has a collector-base voltage rating of 160 V, a collector-emitter voltage of 150 V, and a continuous collector current of 600 mA with a power dissipation of 2.0 W. The operating and storage junction temperature range is -65 to +150°C. Thermal resistance is 62.5 °C/W. The device meets no specified industry standards. The SOT-223 package dimensions are provided with lead spacing from 1.50 to 1.80 mm and body length from 6.30 to 6.85 mm.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CZT5401 BK
Bipolar Transistors - BJT CZT5401 BK
Bipolar Transistors - BJT SS Transistor

Bipolar Transistors - BJT SS Transistor

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CZT5401 BK
Product Name Bipolar Transistors - BJT
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