Central Semiconductor Corp. Bipolar Transistors - BJT CXT5551 BK

The CXT5551 is an NPN silicon transistor in an SOT-89 surface mount package, designed for high-voltage amplifier applications. It has a collector-base voltage rating of 180 V, a collector-emitter voltage rating of 160 V, and a continuous collector current of 600 mA. Power dissipation is rated at 1.2 W, with an operating and storage junction temperature range of -65°C to +150°C. The thermal resistance is 104 °C/W. Electrical characteristics include a current gain (hFE) of 80 to 250 at IC=10 mA and VCE=5 V, a collector-emitter saturation voltage of 0.20 V at IC=50 mA and IB=5 mA, and a transition frequency of 100 to 300 MHz. The device meets no stated standards or qualifications beyond its electrical and thermal ratings.