Central Semiconductor Corp. Single Bipolar Transistors CXT5401E BK

The CXT5401E is a PNP silicon transistor in an SOT-89 surface-mount package, designed for general-purpose amplification and switching applications requiring high breakdown voltage. It has a collector-emitter voltage rating of 220 V, a continuous collector current of 600 mA, and a power dissipation of 1.2 W. The device features a collector-base breakdown voltage of 250 V, a low saturation voltage of 150 mV at 50 mA collector current, and a minimum current gain of 75 at 50 mA. The thermal resistance is 104 °C/W, and the junction temperature range is -65 °C to +150 °C. The SOT-89 package has emitter, collector, and base terminals, with pinout defined for bottom view. The complementary device is the CXT5551E.