Central Semiconductor Corp. Bipolar Transistors - BJT CMUT5401 BK

The CMUT5401 is a PNP silicon transistor in an SOT-523 surface-mount package, designed for high-voltage amplifier applications. It has a collector-base voltage rating of 160 V, a collector-emitter voltage rating of 150 V, and a continuous collector current of 600 mA with a power dissipation of 250 mW. The operating and storage junction temperature range is -65 to +150 °C. The thermal resistance is 500 °C/W. Electrical characteristics include a current gain (hFE) range of 50 to 240, a transition frequency (fT) of 100 to 300 MHz, and a collector-emitter saturation voltage of 0.2 V at 10 mA collector current. The device is epoxy molded and marked with the code 4C5.