Central Semiconductor Corp. Bipolar Transistors - BJT CMST5086 TR

Description
Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 275mW
Description
Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 275mW
Datasheet
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The CMST5086 is a PNP silicon transistor in an SOT-323 surface mount package, rated for a maximum collector-base voltage of 50 V, collector-emitter voltage of 50 V, and emitter-base voltage of 3.0 V, with a continuous collector current of 50 mA and power dissipation of 275 mW. It operates from -65 °C to +150 °C and has a thermal resistance of 455 °C/W. Current gain (hFE) ranges from 150 to 800 depending on bias conditions, with a transition frequency of 40 MHz and noise figure as low as 2.0 dB under specified conditions. The device meets RoHS compliance and is marked with the code 2PC.

Datasheet Summary
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The CMST5086 is a PNP silicon transistor in an SOT-323 surface mount package, rated for a maximum collector-base voltage of 50 V, collector-emitter voltage of 50 V, and emitter-base voltage of 3.0 V, with a continuous collector current of 50 mA and power dissipation of 275 mW. It operates from -65 °C to +150 °C and has a thermal resistance of 455 °C/W. Current gain (hFE) ranges from 150 to 800 depending on bias conditions, with a transition frequency of 40 MHz and noise figure as low as 2.0 dB under specified conditions. The device meets RoHS compliance and is marked with the code 2PC.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMST5086 TR
Bipolar Transistors - BJT CMST5086 TR
Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 275mW

Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 275mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMST5086 TR
Product Name Bipolar Transistors - BJT
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