Central Semiconductor Corp. Bipolar Transistors - BJT CMPT6429 TR

The CMPT6429 is an NPN silicon transistor in an SOT-23 surface mount package, designed for high gain amplifier applications. It has a collector-emitter voltage rating of 45 V, a collector-base voltage of 55 V, and an emitter-base voltage of 6.0 V. The device supports a continuous collector current of 200 mA and dissipates up to 350 mW. The operating and storage junction temperature range is -65 to +150°C, with a thermal resistance of 357 °C/W. Current gain (hFE) ranges from 500 to 1250 at VCE=5.0 V and IC=100 µA, and the transition frequency is 100 to 700 MHz. The collector-emitter saturation voltage is 0.60 V at IC=100 mA and IB=5.0 mA. The package dimensions follow the SOT-23 (Rev. R4) mechanical outline.