Central Semiconductor Corp. Bipolar Transistors - BJT CMPT6427 TR

The CMPT6427 is an NPN silicon Darlington transistor in a SOT-23 surface-mount package, designed for applications requiring high current gain. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, and a continuous collector current of 500 mA. Power dissipation is rated at 350 mW. The device has a thermal resistance of 357 °C/W and operates over a junction temperature range of -65 to +150 °C. Current gain (hFE) ranges from 14K to 200K depending on collector current. Saturation voltage is 1.20 V at 50 mA and 1.50 V at 500 mA. The part meets RoHS standards.