Central Semiconductor Corp. Bipolar Transistors - BJT CMLT3906EG TR

The CMLT3906EG is a PNP complementary transistor in a SOT-563 surface-mount package, designed for small-signal amplification and switching. It has a collector-base voltage rating of 60 V, collector-emitter voltage of 40 V, and emitter-base voltage of 6.0 V, with a continuous collector current of 200 mA and power dissipation of 300 mW on an FR-4 PCB with a 4.0 mm² copper pad. The device meets enhanced specifications with a minimum hFE of 70 at 1.0 V and 1.0 mA, VCE(sat) of 0.2 V maximum at 50 mA and 5 mA base current, and BVCBO of 60 V minimum. Operating temperature ranges from -65°C to +150°C. The part is halogen-free by design.