Central Semiconductor Corp. Bipolar Transistors - BJT CEN-U05

Description
Bipolar Transistors - BJT NPN 60Vcbo 60Vceo 2.0A 10W Pd 0.1uA
Description
Bipolar Transistors - BJT NPN 60Vcbo 60Vceo 2.0A 10W Pd 0.1uA
Datasheet
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The CEN-U05 is an NPN silicon power transistor designed for general purpose audio amplifier applications, housed in a TO-202 case. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, a continuous collector current of 2.0 A, and a power dissipation of 10 W at TC=25°C. The device operates with a junction temperature range of -65 to +150°C and has a thermal resistance from junction to case of 12.5 °C/W. Electrical characteristics include a collector cutoff current of 0.1 μA, a saturation voltage of 0.5 V at IC=250mA and IB=10mA, and a current gain (hFE) of 80 at IC=50mA. The transition frequency is 50 MHz at IC=200mA.

Datasheet Summary
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The CEN-U05 is an NPN silicon power transistor designed for general purpose audio amplifier applications, housed in a TO-202 case. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, a continuous collector current of 2.0 A, and a power dissipation of 10 W at TC=25°C. The device operates with a junction temperature range of -65 to +150°C and has a thermal resistance from junction to case of 12.5 °C/W. Electrical characteristics include a collector cutoff current of 0.1 μA, a saturation voltage of 0.5 V at IC=250mA and IB=10mA, and a current gain (hFE) of 80 at IC=50mA. The transition frequency is 50 MHz at IC=200mA.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CEN-U05
Bipolar Transistors - BJT CEN-U05
Bipolar Transistors - BJT NPN 60Vcbo 60Vceo 2.0A 10W Pd 0.1uA

Bipolar Transistors - BJT NPN 60Vcbo 60Vceo 2.0A 10W Pd 0.1uA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CEN-U05
Product Name Bipolar Transistors - BJT
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