Central Semiconductor Corp. MOSFET CEDM7004VL

Description
MOSFET N-Ch Enh Mode FET 30V 8.0VGS 450mA
Description
MOSFET N-Ch Enh Mode FET 30V 8.0VGS 450mA
Datasheet
Datasheet Summary
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The CEDM7004VL is an N-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications in load switching and battery-powered portable devices. It is packaged in a SOT-883VL case measuring 1.05 mm in length, 0.65 mm in width, and 0.32 mm in height. The device has a drain-source voltage rating of 30 V, a gate-source voltage rating of 8.0 V, and a continuous drain current of 450 mA at 25°C, with a lower power dissipation limit of 100 mW. It features a low threshold voltage between 0.5 V and 1.0 V, and low on-resistance values of 280 mΩ to 730 mΩ across gate-source voltages of 1.8 V to 4.5 V. ESD protection is rated up to 2 kV.

Datasheet Summary
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The CEDM7004VL is an N-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications in load switching and battery-powered portable devices. It is packaged in a SOT-883VL case measuring 1.05 mm in length, 0.65 mm in width, and 0.32 mm in height. The device has a drain-source voltage rating of 30 V, a gate-source voltage rating of 8.0 V, and a continuous drain current of 450 mA at 25°C, with a lower power dissipation limit of 100 mW. It features a low threshold voltage between 0.5 V and 1.0 V, and low on-resistance values of 280 mΩ to 730 mΩ across gate-source voltages of 1.8 V to 4.5 V. ESD protection is rated up to 2 kV.

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Sheung Wan, Hong Kong
MOSFET N-Ch Enh Mode FET 30V 8.0VGS 450mA

MOSFET N-Ch Enh Mode FET 30V 8.0VGS 450mA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CEDM7004VL
Product Name MOSFET
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