Central Semiconductor Corp. MOSFET CDM7-650 TR13

Description
MOSFET 650V N-Ch PFC FET 30Vgs 5.0nC 1.35Ohm
Description
MOSFET 650V N-Ch PFC FET 30Vgs 5.0nC 1.35Ohm
Datasheet
Datasheet Summary
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The CDM7-650 is a 7.0 A, 650 V N-channel MOSFET in a DPAK package designed for high-voltage switching applications such as power factor correction and inverters. It features a low on-resistance of 1.35 Ω, a low gate charge of 5.0 nC, and a gate-source voltage rating of 30 V. The device has a single pulse avalanche energy rating of 435 mJ and operates with a junction temperature range of -55°C to +150°C. Thermal resistance is 0.89 °C/W from junction to case and 110 °C/W from junction to ambient. The package is a surface-mount DPAK with pins configured as Gate, Drain, Source, and a Drain-connected tab. The part meets RoHS compliance and is marked with the full part number.

Datasheet Summary
Powered by GS/AI

The CDM7-650 is a 7.0 A, 650 V N-channel MOSFET in a DPAK package designed for high-voltage switching applications such as power factor correction and inverters. It features a low on-resistance of 1.35 Ω, a low gate charge of 5.0 nC, and a gate-source voltage rating of 30 V. The device has a single pulse avalanche energy rating of 435 mJ and operates with a junction temperature range of -55°C to +150°C. Thermal resistance is 0.89 °C/W from junction to case and 110 °C/W from junction to ambient. The package is a surface-mount DPAK with pins configured as Gate, Drain, Source, and a Drain-connected tab. The part meets RoHS compliance and is marked with the full part number.

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Sheung Wan, Hong Kong
MOSFET 650V N-Ch PFC FET 30Vgs 5.0nC 1.35Ohm

MOSFET 650V N-Ch PFC FET 30Vgs 5.0nC 1.35Ohm

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CDM7-650 TR13
Product Name MOSFET
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