Central Semiconductor Corp. Bipolar Transistors - BJT BCY78-VII

The BCY78-VII is a silicon PNP epitaxial planar transistor in a TO-18 metal case, designed for low noise amplifier and switching applications. It has a collector-base voltage rating of 32 V, a collector-emitter voltage of 32 V, an emitter-base voltage of 5.0 V, and a continuous collector current of 100 mA. Power dissipation is 340 mW at 25°C ambient temperature and 1.0 W at 25°C case temperature. The transistor has a thermal resistance of 450 °C/W from junction to ambient and 150 °C/W from junction to case. Current gain (hFE) ranges from 140 to 220 at VCE=5.0 V and IC=2.0 mA, and from 80 to 220 at VCE=1.0 V and IC=10 mA. Transition frequency is 100 MHz at VCE=5.0 V and IC=10 mA. Noise figure is 10 dB at VCE=5.0 V, IC=0.2 mA, and Rs=2.0 kΩ. Operating and storage junction temperatures range from -65 to +200 °C.