Central Semiconductor Corp. Bipolar Transistors - BJT BCY59-IX

The BCY59-IX is an NPN silicon epitaxial planar transistor in a TO-18 metal case, designed for low noise amplifier and switching applications. It has a collector-base voltage rating of 45 V, collector-emitter voltage of 45 V, emitter-base voltage of 7.0 V, and a continuous collector current of 100 mA. Power dissipation is 340 mW at 25°C ambient temperature, increasing to 1.0 W at 25°C case temperature. The junction and storage temperature range is -65°C to +200°C. The transistor exhibits a current gain (hFE) of 160 to 630 at VCE=1.0 V and IC=10 mA. Transition frequency is 150 MHz with IC=10 mA. Collector-emitter saturation voltage is 0.70 V at IC=100 mA and IB=2.5 mA. Thermal resistance from junction to case is 150°C/W and junction to ambient is 450°C/W.