Central Semiconductor Corp. Single Bipolar Transistors BC856AT TR PBFREE

The BC856AT is a PNP silicon transistor in an SOT-523 surface mount package, designed for general purpose switching and amplifier applications. It has a collector-emitter voltage rating of 65 V, a continuous collector current of 100 mA, and a power dissipation of 250 mW. The device features a minimum current gain (hFE) of 125 at IC=2.0 mA and VCE=5.0 V, with a maximum of 250. Electrical characteristics include a collector-base voltage of 80 V, a base-emitter voltage of 5.0 V, and a thermal resistance of 500 °C/W. Operating and storage junction temperatures range from -65 to +150 °C. The part is offered in a lead-free plating variant as specified by the PBFREE suffix.