Central Semiconductor Corp. Single Bipolar Transistors BC182 APM TIN/LEAD

Description
50V 100MA 350MW TH TRANSISTOR-SM
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Description
50V 100MA 350MW TH TRANSISTOR-SM
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Datasheet
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The BC182 is a silicon NPN transistor in a TO-92-18R package for general-purpose applications, with a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation of 350 mW at 25°C. The device has a thermal resistance of 357 °C/W and operates over a junction temperature range of -65°C to +150°C. Current gain (hFE) ranges from 80 to 500 depending on collector current, and the transition frequency is 150 MHz at 10 mA. The collector-base and emitter-base breakdown voltages are 60 V and 6.0 V respectively. The part is marked with its full part number and has a Cib of 8.0 pF and Cob of 5.0 pF at specified conditions.

Datasheet Summary
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The BC182 is a silicon NPN transistor in a TO-92-18R package for general-purpose applications, with a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation of 350 mW at 25°C. The device has a thermal resistance of 357 °C/W and operates over a junction temperature range of -65°C to +150°C. Current gain (hFE) ranges from 80 to 500 depending on collector current, and the transition frequency is 150 MHz at 10 mA. The collector-base and emitter-base breakdown voltages are 60 V and 6.0 V respectively. The part is marked with its full part number and has a Cib of 8.0 pF and Cob of 5.0 pF at specified conditions.

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Single Bipolar Transistors - 1514-BC182APMTIN/LEADTB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1514-BC182APMTIN/LEADTB-ND
Single Bipolar Transistors 1514-BC182APMTIN/LEADTB-ND
50V 100MA 350MW TH TRANSISTOR-SM

50V 100MA 350MW TH TRANSISTOR-SM

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 1514-BC182APMTIN/LEADTB-ND
Product Name Single Bipolar Transistors
Polarity NPN
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