The BC108B is an NPN silicon transistor in a TO-18 package, designed for general purpose amplifier applications. It has a collector-emitter voltage rating of 25V, a continuous collector current of 200mA, and a power dissipation of 600mW. The collector-base voltage is 30V, and the emitter-base voltage is 5.0V. The operating and storage junction temperature range is -65°C to +200°C. The transistor has a thermal resistance of 175°C/W, a current gain (hFE) between 200 and 450 at IC=2.0mA and VCE=5.0V, and a transition frequency of 150MHz. It is marked with the full part number and has a lead configuration of emitter, base, collector. The PBFREE suffix indicates a lead-free plating option as specified by the manufacturer for this series.
Bipolar (BJT) Transistor NPN 25V 200mA 150MHz 600mW Through Hole TO-18
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-BC108BPBFREE-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |