Central Semiconductor Corp. Bipolar Transistors - BJT BC107A

The BC107A is a silicon NPN bipolar transistor in a TO-18 package, designed for general purpose amplifier applications. It has a collector-base voltage rating of 50 V, collector-emitter voltage of 45 V, and emitter-base voltage of 6.0 V. The continuous collector current is 200 mA, with a power dissipation of 600 mW. The operating and storage junction temperature range is -65 to +200 °C. The thermal resistance from junction to case is 175 °C/W. The current gain (hFE) ranges from 110 to 220 at VCE=5.0 V and IC=2.0 mA. The transition frequency (fT) is 150 MHz at VCE=5.0 V and IC=10 mA. The collector-emitter saturation voltage is 0.25 V at IC=10 mA and IB=0.5 mA. The case is TO-18 with pinout: 1) Emitter, 2) Base, 3) Collector.