Central Semiconductor Corp. Bipolar Transistors - BJT BC107

The BC107 is an NPN silicon transistor in a TO-18 package for general-purpose amplifier applications. It has a collector-base voltage rating of 50 V, a collector-emitter voltage of 45 V, and an emitter-base voltage of 6.0 V. The continuous collector current is 200 mA, and the power dissipation is 600 mW. The operating and storage junction temperature range is -65 to +200 °C, with a thermal resistance of 175 °C/W. The current gain (hFE) at VCE=5.0 V and IC=2.0 mA ranges from 110 to 450, and the transition frequency (fT) is 150 MHz at IC=10 mA. The collector-emitter saturation voltage is 0.25 V at IC=10 mA and IB=0.5 mA. The device complies with RoHS standards.