Central Semiconductor Corp. Bipolar RF Transistors 2N918 PBFREE

The 2N918 is an NPN silicon RF transistor in a TO-72 package, designed for high-frequency amplifier and oscillator applications. It has a collector-emitter voltage rating of 15 V, a continuous collector current of 50 mA, and a power dissipation of 200 mW. The transistor features a transition frequency of 600 MHz at 10 V and 4 mA, with a current gain (hFE) of 20 at 1 V and 3 mA. The case is hermetically sealed with leads for emitter, base, collector, and case connection. The device operates with a junction temperature range from -65°C to +200°C and thermal resistance from junction-to-ambient of 87.5°C/W. The marking includes the full part number.