Central Semiconductor Corp. Single Bipolar Transistors 2N708 PBFREE

The 2N708 is an NPN silicon transistor designed for saturated switching applications, housed in a TO-18 metal case. It has a collector-emitter breakdown voltage of 15 V, a collector current rating of 10 mA at a collector-emitter voltage of 1.0 V, and a collector-emitter saturation voltage of 0.4 V at 10 mA. The device exhibits a current gain (hFE) of 120 at 10 mA and 1 V, with a maximum transition frequency of 400 MHz.