Central Semiconductor Corp. Single Bipolar Transistors 2N6715-18 TIN/LEAD

NPN silicon power transistor in TO-237 package for general purpose amplification and switching, with a collector-base voltage of 50 V, collector-emitter voltage of 40 V, continuous collector current of 2.0 A, power dissipation of 1.0 W at 25°C, and thermal resistance of 125 °C/W. Operating and storage junction temperature ranges from -65 to +150 °C. The part has a minimum current gain of 50 at 1.0 A collector current and a transition frequency of 500 MHz.