Central Semiconductor Corp. Single Bipolar Transistors 2N6668 TIN/LEAD

The 2N6668 is a PNP bipolar transistor in a TO-220 package, rated for a collector current of 10 A, power dissipation of 65 W, collector-emitter voltage of 80 V, and transition frequency of 20 MHz. It features a Darlington configuration with a minimum hFE of 1,000 at a collector current of 5 A and a collector-emitter saturation voltage of 5.0 V at 5 A. The package dimensions are in accordance with TO-220 standards, with a lead spacing of 14.23-15.87 mm and a body height of 5.85-6.85 mm. The part is bulk packed in quantities of 500 and is available in tin/lead plating variant.