Central Semiconductor Corp. Single Bipolar Transistors 2N6520 APM PBFREE

The 2N6520 is a PNP silicon transistor designed for high voltage driver and amplifier applications in a TO-92 package. It has a collector-base voltage rating of 350 V, a collector-emitter voltage rating of 350 V, a continuous collector current of 500 mA, and a power dissipation of 625 mW. The operating and storage junction temperature ranges from -65°C to +150°C. Electrical characteristics include a saturation voltage of 1.0 V at IC=50mA and IB=5.0mA, and a forward voltage of 2.0 V at VCE=10V and IC=100mA. Current gain (hFE) ranges from 20 to 200 at VCE=10V and IC=50mA. The transition frequency is 200 MHz, and the collector-base capacitance is 6.0 pF at VCB=20V.