Central Semiconductor Corp. Bipolar Transistors - BJT 2N6519

The 2N6519 is a PNP silicon high voltage transistor in a TO-92 package, designed for driver and amplifier applications. It has a collector-base voltage rating of 300 V, a collector-emitter voltage rating of 300 V, a continuous collector current of 500 mA, and a power dissipation of 625 mW. The emitter-base voltage is rated at 5.0 V. Electrical characteristics include a collector-emitter saturation voltage of 0.35 V at IC=20 mA and IB=2.0 mA, and a base-emitter saturation voltage of 0.85 V under the same conditions. Current gain (hFE) ranges from 20 to 200 at VCE=10 V and IC=50 mA. Transition frequency is 200 MHz at VCE=20 V and IC=10 mA. The operating and storage junction temperature range is -65 to +150 °C.