Central Semiconductor Corp. Bipolar Transistors - BJT 2N6517

The 2N6517 is an NPN silicon high voltage transistor in a TO-92 package, designed for driver and amplifier applications. It has a collector-base voltage rating of 350 V, a collector-emitter voltage rating of 350 V, and a continuous collector current of 500 mA. Power dissipation is rated at 625 mW. The operating and storage junction temperature range is -65 to +150 °C. Current gain (hFE) ranges from 30 to 200 at VCE=10 V and IC=30 mA, and from 20 to 200 at IC=50 mA. Collector-emitter saturation voltage is 0.50 V at IC=30 mA and IB=3.0 mA. Base-emitter saturation voltage is 0.90 V at IC=30 mA and IB=3.0 mA. Transition frequency is 200 MHz at VCE=20 V and IC=10 mA. Collector-base capacitance is 6.0 pF at VCB=20 V, and emitter-base capacitance is 80 pF at VEB=0.5 V.